The igbt is a switching device designed to have the highspeed switching performance and gate voltage control of a power mosfet as well as the highvoltage largecurrent handling capacity of a bipolar transistor. Fuji electric has been developing igbt modules designed to be used as switching elements for power converters of variablespeed drives for motors, uninterruptable power supplies, and more. Photo editing software for fujifilm cameras capture one fujifilm. Fuji power semiconductors igbt modules selection guide 25a1c0003a. Igbt module, 2mbi200u4b120 datasheet, 2mbi200u4b120 circuit, 2mbi200u4b120 data sheet. Fuji electric offers an extensive lineup of igbt modules. Semiconductors group fuji electric device technology co. Higher currents in the range of kilo amperes are required in case of high power rated equipments. Many designers view igbt as a device with mos input characteristics and bipolar output characteristic that is a voltagecontrolled bipolar device. Fuji electric 7th generation igbt technology powers today. Evolution of fuji electric igbt technology 1985 1990 1995 2000 2005 2010 trench gate field stop t jmax. Igbt ipm r series1200v 50a 7 in onepackage7mbp50ra120features temperature protection provided by directly detecting the junctiontemperature of the igbts low power loss and soft switching compatible with existing ipmn series packages high performance and high reliability igbt.
Todays power electronic market is driving development of compact, lowloss, and, highreliability igbt modules to optimize power conversion systems. Our unique design concept increases the igbt performance and allows continuous 175. Fuji electric catalog first page, datasheet, datasheet search, data sheet, datasheets, datasheet search site for. Igbt 6pack page 1 igbt pim page 3 igbt discretes page igbt standard 2pack1pack page 6 igbt high power modules page 7 igbt ipm page 12 igbt modules fuji power semiconductors igbt modules jul. View our full product line, datasheets, and resources below. Igbt 600v75apim, 7mbr75sb060 datasheet, 7mbr75sb060 circuit, 7mbr75sb060 data sheet.
The igbt element consists of many arranged structures called cells. Many designers view igbt as a device with mos input. This means that an igbt can be switched on and off using voltage signals in the same way as a power mosfet. Request info find local sales subscribe to mailing list. Ever since it commercialized insulated gate bipolar transistor igbt modules in 1988, fuji electric has contributed to miniaturization, cost reduction, and performance improvement of power conversion equipment. Compatible with igbt switch modules by fuji electric systems co. Agileswitch plugandplay drivers are packaged as complete be directly connected to igbt modules for instant use. Professional photo editing software and raw converter for fujifilm cameras.
Igbt 7th gen technical documents fuji electric corp. Unit datasheet search, datasheets, datasheet search site. Charged evs fuji electric igbt white paper download. Power semiconductors igbt application manuals fuji electric. In response, fuji electric has developed our 7 th generation xseries igbt. In general the more the igbt cells are provided, the lower the onstate voltage will be. The data presented in this manual supersedes all previous specifications. All applications described in this catalog exemplify the use of fuji s products for your reference only. Taku takaku senior semiconductor application engineer fuji. An igbt module that has been found to be faulty can be checked by testing it on a transistor characteristics measuring.
Igbt 6pack page 1 igbt pim page 3 igbt discretes page igbt standard 2pack1pack page 6 igbt high power modules page 7 igbt ipm page 12 igbt modules fuji power semiconductors igbt. The planar gate punchthrough igbt was the mainstream igbt at that time. Fuji electric 7thgeneration x series dual xt igbt modules combine improved electrical and thermal performance to deliver a 1200v800a rating in a 150mm x 62mm package. The more the igbt cells are provided, the lower onstate voltage the be. Unzip the downloaded file and copy to a custom folder. In particular, the fuji electric xseries dual xt module is the. Fuji electric 7th generation igbt technology powers todays. Technical documents mt5f14993 quality is our message 1 8 101214161 0 200 400 600 800 1200 1400 1600 150ua120 200ub120 300ud120 i sc a v ge visc fuji igbt modules u series. The acswitch in ttype modules uses the unique rb igbt reverse blocking to realize exceptional low switching losses. Fuji electric has supplied igbts to the market since it commercialized them in 1988. Competitive prices from the leading fuji electric intelligent power modules distributor.
Igbt discrete is subdivided in discrete igbt with antiparallel diode, discrete igbt without antiparallel diode, 600 v 1200 v ultra soft diode and 650 v rapid 1 and rapid 2 diode. If the last two figures after hyphen of product name are from 50 through 99, the product is compatible with eu rohs directive. Paralleling igbt modules becomes necessary when the output current requirement cannot be provided by a single igbt module. Fuji igbt modules for wind power system fuji solution in gate driver unit gdu fuji solution table of contents. The igbt chip consists of many arranged structures called unit cells. For further information on cookies please check our data protection declaration. Reduction of power dissipation chip technology 7th generation xseries igbt power dissipation performance has been improved dramatically. Dec 19, 2017 q igbt characteristics tue, 19 dec 2017 fuji igbt modules this section illustrates the characteristics of the new 5th generation igbt modules, using the u series 6mbi100ub120 1200v, 100a as an example. We use cookies to optimize and constantly improve our website for you.
Fuji electric has also advanced the miniaturization of surface structure that is imperative to improve the characteristics of igbt. Fuji electrics new standard igbt module for evshevs was developed to realize high power density. Mar 02, 2015 in 2006 fuji electric achieved worldleading level of power loss reduction and downsizing new dual, a new product line of fifth generation fuji igbt modules u4 series. Application note discrete igbt datasheet explanation. The punchthrough igbt used the epitaxial wafer and the carriers were highinjected from the collector side to obtain the low on state voltage.
Fuji electric provides 3level igbt modules in two different topologies. The igbt and diode devices of fuji electrics 7thgeneration x series that constitute these modules have been made thinner and miniaturized, thereby optimizing the device structure. Igbt test procedures fuji igbt modules raynet repair. Fuji electric igbt power transistor modules and power. Fuji electric intelligent power modules element14 singapore. Fuji power semiconductors igbt modules selection guide 25a1e0003a. Limited warranty fuji makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of others intellectual property rights which may arise from the use of the applications described herein. Fuji power semiconductors igbtsic devices selection guide. The planargate punchthrough igbt was the mainstream igbt at that time.
Fuji electric has been providing igbts to the market since it commercialized them in 1988. The punchthrough igbt used the epitaxial sillicon wafer and the minority carriers were highinjected from the collector side to obtain strong. Save on the fullfeature set in capture one pro with this version exclusive to. Fuji power semiconductors igbt modules selection guide. Igbt discrete situated itself as the market leader through groundbreaking innovation and application focus. A single module of an igbt is capable of handling currents up to 600 a in the dual configuration. No right or license, either express or implied, under any patent, trade secret or other intellectual property right owned by fuji. Fuji electric igbt modules applications pv, ups, wind 3level module standard 2pack hpm nc, servo ipm smallipm motor drive smallpim pim, 6pack standard 2pack traction standard 2pack primepacktm hpm. For a better understanding it is helpful to read this part along with a datasheet. Igbt modules igbt inverter semiconductors fuji electric. In response, fuji electric has developed our 7 th generation xseries igbt technology combining enhanced semiconductor chip characteristics and improved packaging structure. Fuji power semiconductors igbt sic devices selection guide 25a2j0005a. In addition, we have developed a reverseconducting igbt rcigbt, which integrates an igbt and a fwd into one chip, and in turn the 7thgeneration x series rcigbt module for industrial use that incorporates the chip 34.
Fuji electric intelligent power modules at element14. The applied igbt and fwd chips reduce the module loss by using fuji electrics seventhgeneration chip technology and reverseconductance igbt technology, resulting in a reduction in the overall module dimension of the igbt. Fuji, alldatasheet, datasheet, datasheet search site for electronic components and semiconductors. Fuji electric has also implemented fine pattan silicon process in surface side structures to improve the characteristics of igbt. Therefore, to satisfy these requirements, the insulated gate bipolar transistor igbt was developed. Fuji igbt modules application manual february 2004. Fuji electric innovating energy technology igbt modules. Prime pack is registered trademark infineon technology ag, germany. Fuji electric igbt white paper download fuji electrics new standard igbt module technology. Igbt designers manual data sheets the igbt devices listed in this designers manual represent international rectifiers igbt line as of august, 1994. Igbt gate driver reference design for parallel igbts with. The dynex manufacturing plant is a vertically integrated facility with device design,wafer fab, packaging, qualification and testing available on site.
Q igbt characteristics fuji igbt modules raynet repair. Igbt datasheet, igbt pdf, igbt data sheet, datasheet, data sheet, pdf. Buy your vla51701r from an authorized fuji electric distributor. Reduces power dissipation to contribute to energy saving. Fuji igbt modules application manual fuji electric. To ensure safety, ionmigration on the substrate surface must not degrade. By applying the chip technology of the 7thgeneration x series to optimize the chip structure, we have. By continuing to use the website, you agree to the usage of cookies. Download fuji igbt modules application manual printable file. Products category page number of igbt switches internal configuration max v. Fuji electrics igbt module or insulatedgate bipolar transistor is a highperformance 7th generation igbtfwd chipset with a compact design that provides for greater power output. Fuji largecapacity ups highefficiency, full igbt ups7000hxt4 series threephase, fourwire gate city ohsaki, east tower, 112, osaki 1chome, shinagawaku, tokyo 1410032, japan.
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